Introduction & Context

In crystallisation processes, the rate at which a crystal grows is often governed by the transport of solute to the crystal surface and the kinetics of incorporation at that surface. When the mass transfer to the surface is fast compared with the surface reaction, the growth is said to be surface integration controlled. The calculation presented here provides a simple, empirical expression for the crystal growth rate that can be used in process design, scale-up, and optimisation of crystallisation units such as crystallisers, crystallisation columns, and crystallisation reactors in the pharmaceutical, chemical, and materials industries.

Methodology & Formulas

The calculation follows a standard empirical approach:

  1. Supersaturation is defined as the difference between the bulk solute concentration and the saturation concentration at the operating temperature: \[ \Delta C = C - C_{\text{s}} \] A small positive value is enforced to avoid division by zero or negative supersaturation.
  2. Growth rate is expressed as a power-law function of supersaturation: \[ G = k \, (\Delta C)^{g} \] where \(k\) is an empirical rate constant with units of \(\text{g}\,\text{cm}^{-2}\,\text{h}^{-1}\,(\text{mol}\,\text{L}^{-1})^{-g}\) and \(g\) is the growth order (dimensionless). This form captures the non-linear dependence of the growth rate on supersaturation that is characteristic of surface integration controlled growth.
  3. Validity checks are performed to ensure that the input parameters lie within empirically established bounds. If any parameter falls outside its typical range, a warning is issued. The bounds are summarised in the table below.
Parameter Typical Range
k (rate constant) \(0.1 \le k \le 10.0\) \(\text{g}\,\text{cm}^{-2}\,\text{h}^{-1}\,(\text{mol}\,\text{L}^{-1})^{-g}\)
g (growth order) \(1.0 \le g \le 2.0\)
ΔC (supersaturation) \(0.01 \le \Delta C \le 0.5\) \(\text{mol}\,\text{L}^{-1}\)
T (temperature) \(0.0 \le T \le 80.0\) °C
P (pressure) \(0.5 \le P \le 2.0\) bar